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2SC3356 Datasheet(PDF) 2 Page - Unisonic Technologies |
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2SC3356 Datasheet(HTML) 2 Page - Unisonic Technologies |
2 / 4 page 2SC3356 NPN SILICON TRANSISTOR UNISONICTECHNOLOGIESCO.,LTD 2 of 4 www.unisonic.com.tw QW-R206-024,D ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector to Base Voltage BVCBO 20 V Collector to Emitter Voltage BVCEO 12 V Emitter to Base Voltage BVEBO 3 V Collector Current IC 100 mA Power Dissipation PD 200 mW Junction Temperature TJ 150 °С Storage Temperature TSTG -65~ +150 °С Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-Base Cut-Off Current ICBO VCB =10 V,IE =0 1.0 μA Emitter-Base Cut-Off Current IEBO VEB =1 V, IC=0 1.0 μA DC Current Gain hFE VCE =10 V, IC =20 mA 50 300 Gain Bandwidth Product fT VCE =10 V, IC =20 mA 7 GHz Feed-Back Capacitance CRE VCB =10 V, IE =0, f =1.0MHz 1.0 pF Noise Figure NF VCE =10 V, IC =7mA, f =1.0GHz 2.0 dB CLASSIFICATION OF hFE RANK A B C RANGE 50-160 160-240 240-300 |
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