2SD1624L-X-AB3-R datasheet(2/5 Pages) UTC

No. de pieza	2SD1624L-X-AB3-R

Descripción Electrónicos	HIGH CURRENT SWITCHIG APPLICATION

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Fabricante Electrónico	UTC [Unisonic Technologies]

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2SD1624

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R208-005.C

ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

6

V

Collector Power Dissipation( Tc=25

°C)

Pc

500

mW

DC

Ic

3

A

Collector Current

PULSE

Icp

6

A

Junction Temperature

TJ

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=10μA, IE=0

60

V

Collector-Emitter Breakdown Voltage

BVCEO

IC=1mA, RBE=∞

50

V

Emitter-Base Breakdown Voltage

BVEBO

IE=10μA, IC=0

6

V

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=2A, IB=100mA

0.19

0.5

V

Base-Emitter Saturation Voltage

VBE(SAT)

IC=2A, IB=100mA

0.94

1.2

V

Collector Cut-Off Current

ICBO

VCB=40V, IE=0

1

μA

Emitter Cut-Off Current

IEBO

VEB=4V, IC=0

1

μA

DC Current Gain

hFE

VCE=2V, Ic=100mA

100

560

Gain-Bandwidth Product

fT

VCE=10V, IC=50mA

150

MHz

Output Capacitance

Cob

VCE=10V, f=1MHz

25

pF

Turn-ON Time

tON

See test circuit

70

ns

Storage Time

tSTG

See test circuit

650

ns

Fall Time

tF

See test circuit

35

ns

CLASSIFICATION OF hFE

RANK

R

S

T

U

RANGE

100-200

140-280

200-400

280-560

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