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FAN3226T Datasheet(PDF) 6 Page - Fairchild Semiconductor

No. de pieza FAN3226T
Descripción Electrónicos  Application Review and Comparative Evaluation of Low-Side Gate Drivers
Download  12 Pages
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Fabricante Electrónico  FAIRCHILD [Fairchild Semiconductor]
Página de inicio  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FAN3226T Datasheet(HTML) 6 Page - Fairchild Semiconductor

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AN-6069
APPLICATION NOTE
© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
Rev. 1.0.3 • 1/6/10
6
(c)
Figure 11. Current Flow and Diode Clamp Circuit for
Transformer Driver
If the transformer is designed with low leakage inductance,
the propagation delays through the transformer can be less
than 50ns. The GT03 series of transformers from ICE
Components
[4] is an example of devices with leakage
inductance of a few hundred nanoHenries. This is achieved
by using tightly coupled windings on a small ferrite core.
In the previous transformer examples, the positive and
negative peaks vary with duty cycle, while the secondary
voltage VS swings around zero volts. In a pulse transformer
application, the pulses might feed circuits that cannot accept
the negative-going pulses. The circuit in Figure 12
incorporates a clamp circuit consisting of a second coupling
capacitor CCS and a diode that restores the DC level of the
secondary voltage.
Figure 12. Pulse Transformer with DC Restore Circuit
Series resistor RS serves to damp the initial transient at
startup when CCS is initially uncharged, and is often a
discrete resistor in addition to the internal driver impedance.
From classical RLC circuit theory, a value of RS for critical
damping is approximately:
CC
MAG
S
C
L
2
R
=
(15)
where LMAG is the magnetizing inductance of the
transformer.
Figure 13 shows a gate drive application circuit that utilizes
the DC restore circuit of the previous example with some
additional modifications.
Figure 13. Improved Gate Drive Transformer Circuit
The PNP transistor added at the gate of the MOSFET is
turned on when the secondary voltage goes negative to
speed up the turn-off time of the MOSFET.
Reference [3], “Design and Application Guide for High
Speed MOSFET Gate Drive Circuits,” offers further
information on transformer-coupled gate drives and should
be consulted for detailed design methodology beyond the
scope of the present topic.
Discrete or Integrated Drivers
External drivers can be designed using discrete transistors or
integrated circuit solutions that come as predesigned blocks.
To select a solution, designers must evaluate the competing
size, features, cost, and the overall range of applications to
be covered. Regardless of the driver selection, there are
some common requirements. Integrated or discrete-design
drivers need a local bypass capacitor to supply the high
current pulses delivered during the switching intervals and
might include a resistor between the driver and the PWM
supply VDD. In general, drivers have the greatest impact
when located close to the MOSFET gate-source connections
to minimize parasitic inductance and resistance effects.
Discrete solutions can be designed using bipolar transistors,
as shown in Figure 14. The NPN/PNP totem pole features a
non-inverting configuration driven by the PWM output. This
circuit prevents shoot-through in the bipolar stage because
only one of the totem pole devices can be forward biased at
a time. In the bipolar common emitter configuration, the
driving signal must have fast edges to provide fast
switching, and it should be noted that the MOSFET gate is
not ohmically connected to the rail when high or low.
Figure 14. Discrete Bipolar Transistor Drive Circuit


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