BCW68F datasheet(3/8 Pages) INFINEON

No. de pieza	BCW68F

Descripción Electrónicos	PNP Silicon AF Transistors

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Fabricante Electrónico	INFINEON [Infineon Technologies AG]

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3 / 8 page

2007-04-20

3

BCW67, BCW68

Electrical Characteristics at TA = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC Characteristics

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0 , BCW67

IC = 10 mA, IB = 0 , BCW68

V(BR)CEO

32

45

-

V

Collector-base breakdown voltage

IC = 10 µA, IE = 0 , BCW67

IC = 10 µA, IE = 0 , BCW68

V(BR)CBO

45

60

-

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

V(BR)EBO

5

-

Collector-base cutoff current

VCB = 32 V, IE = 0

VCB = 45 V, IE = 0

VCB = 32 V, IE = 0 , TA = 150 °C; BCW67

VCB = 45 V, IE = 0 , TA = 150 °C; BCW68

ICBO

-

0.02

20

µA

Emitter-base cutoff current

VEB = 4 V, IC = 0

IEBO

-

20

nA

DC current gain1)

IC = 100 µA, VCE = 10 V, hFE-grp.A/F

IC = 100 µA, VCE = 10 V, hFE-grp.B/G

IC = 100 µA, VCE = 10 V, hFE-grp.C/H

IC = 10 mA, VCE = 1 V, hFE-grp.A/F

IC = 10 mA, VCE = 1 V, hFE-grp.B/G

IC = 10 mA, VCE = 1 V, hFE-grp.C/H

IC = 100 mA, VCE = 1 V, hFE-grp.A/F

IC = 100 mA, VCE = 1 V, hFE-grp.B/G

IC = 100 mA, VCE = 1 V, hFE-grp.C/H

IC = 500 mA, VCE = 2 V, hFE-grp.A/F

IC = 500 mA, VCE = 2 V, hFE-grp.B/G

IC = 500 mA, VCE = 2 V, hFE-grp.C/H

hFE

35

50

80

75

120

180

100

160

250

35

60

100

-

160

250

350

-

250

400

630

-

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BCW68F Datasheet(PDF) 3 Page - Infineon Technologies AG

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