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BF1009S Datasheet(PDF) 2 Page - Infineon Technologies AG

No. de pieza BF1009S
Descripción Electrónicos  Silicon N-Channel MOSFET Tetrode
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Fabricante Electrónico  INFINEON [Infineon Technologies AG]
Página de inicio  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

BF1009S Datasheet(HTML) 2 Page - Infineon Technologies AG

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2007-04-20
2
BF1009S...
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point1)
BF1009S, BF1009SR
Rthchs
≤ 370
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Drain-source breakdown voltage
ID = 500 µA, VG1S = 0 , VG2S = 0
V(BR)DS
12
-
-
V
Gate1-source breakdown voltage
+IG1S = 10 mA, VG2S = 0 , VDS = 0
+V(BR)G1SS
9
-
12
Gate2 source breakdown voltage
±I
G2S = 10 mA, VG1S = 0 , VDS = 0
±V
(BR)G2SS
9
-
12
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
+IG1SS
-
-
60
µA
Gate 2 source leakage current
±V
G2S = 8 V, VG1S = 0 , VDS = 0
±I
G2SS
-
-
50
nA
Drain current
VDS = 9 V, VG1S = 0 , VG2S = 6 V
IDSS
-
-
500
µA
Operating current (selfbiased)
VDS = 9 V, VG2S = 6 V
IDSO
10
13
16
mA
Gate2-source pinch-off voltage
VDS = 9 V, ID = 500 µA
VG2S(p)
-
0.9
-
V
1For calculation of RthJA please refer to Application Note Thermal Resistance


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