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BF1009S Datasheet(PDF) 2 Page - Infineon Technologies AG |
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BF1009S Datasheet(HTML) 2 Page - Infineon Technologies AG |
2 / 8 page 2007-04-20 2 BF1009S... Thermal Resistance Parameter Symbol Value Unit Channel - soldering point1) BF1009S, BF1009SR Rthchs ≤ 370 K/W Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteristics Drain-source breakdown voltage ID = 500 µA, VG1S = 0 , VG2S = 0 V(BR)DS 12 - - V Gate1-source breakdown voltage +IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 9 - 12 Gate2 source breakdown voltage ±I G2S = 10 mA, VG1S = 0 , VDS = 0 ±V (BR)G2SS 9 - 12 Gate1-source leakage current VG1S = 6 V, VG2S = 0 +IG1SS - - 60 µA Gate 2 source leakage current ±V G2S = 8 V, VG1S = 0 , VDS = 0 ±I G2SS - - 50 nA Drain current VDS = 9 V, VG1S = 0 , VG2S = 6 V IDSS - - 500 µA Operating current (selfbiased) VDS = 9 V, VG2S = 6 V IDSO 10 13 16 mA Gate2-source pinch-off voltage VDS = 9 V, ID = 500 µA VG2S(p) - 0.9 - V 1For calculation of RthJA please refer to Application Note Thermal Resistance |
Número de pieza similar - BF1009S_07 |
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Descripción similar - BF1009S_07 |
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