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LS124_SOIC Datasheet(PDF) 1 Page - Micross Components |
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LS124_SOIC Datasheet(HTML) 1 Page - Micross Components |
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1 / 1 page Click To Buy Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. FEATURES Direct Replacement for INTERSIL LS124 HIGH GAIN hFE ≥ 1500 @ 1 AND 10µA LOW OUTPUT CAPACITANCE ≤ 2.0pF VBE tracking ≤ 5.0µV°C ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +200°C Operating Junction Temperature ‐55°C to +150°C Maximum Power Dissipation Continuous Power Dissipation (One side) 250mW Continuous Power Dissipation (Both sides) 500mW Linear Derating factor (One side) 2.3mW/°C Linear Derating factor (Both sides) 4.3mW/°C Maximum Currents Collector Current 10mA MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC MIN TYP MAX UNITS CONDITIONS |VBE1 – VBE2 | Base Emitter Voltage Differential ‐‐ 2 5 mV IC = 10µA, VCE = 1V ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature ‐‐ 5 15 µV/°C IC = 10µA, VCE = 1V TA = ‐55°C to +125°C |IB1 – IB2 | Base Current Differential ‐‐ ‐‐ 0.6 nA IC = 10µA, VCE = 1V ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. TYP. MAX. UNITS CONDITIONS BVCBO Collector to Base Voltage 2 ‐‐ ‐‐ V IC = 10µA, IE = 0 BVCEO Collector to Emitter Voltage 2 ‐‐ ‐‐ V IC = 10µA, IB = 0 BVEBO Emitter‐Base Breakdown Voltage 6.2 ‐‐ ‐‐ V IE = 10µA, IC = 0 2 BVCCO Collector to Collector Voltage 100 ‐‐ ‐‐ V IC = 10µA, IE = 0 hFE DC Current Gain 1500 ‐‐ ‐‐ IC = 1µA, VCE = 1V 1500 ‐‐ ‐‐ IC = 10µA, VCE = 1V VCE(SAT) Collector Saturation Voltage ‐‐ ‐‐ 0.5 V IC = 1mA, IB = 0.1mA IEBO Emitter Cutoff Current ‐‐ ‐‐ 100 pA IC = 0, VEB = 3V ICBO Collector Cutoff Current ‐‐ ‐‐ 100 pA IE = 0, VCB = 1V COBO Output Capacitance ‐‐ ‐‐ 2 pF IE = 0, VCB = 1V CC1C2 Collector to Collector Capacitance ‐‐ ‐‐ 2 pF VCC = 0V IC1C2 Collector to Collector Leakage Current ‐‐ ‐‐ 10 nA VCC = ±50V fT Current Gain Bandwidth Product 100 ‐‐ ‐‐ MHz IC = 100µA, VCE = 1V NF Narrow Band Noise Figure ‐‐ ‐‐ 3 dB IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. LS124 MONOLITHIC DUAL NPN TRANSISTOR LS124 Features: Very high gain Tight matching Low Output Capacitance The LS124 is a monolithic pair of Super-Beta NPN transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The LS124 is a direct replacement for discontinued Intersil IT124. The 8 Pin SOIC provides ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Linear Systems replaces discontinued Intersil IT124 Available Packages: LS124 in SOIC LS124 available as bare die Please contact Micross for full package and die dimensions: Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx SOIC (Top View) |
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