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ADP1875-0.3-EVALZ Datasheet(PDF) 4 Page - Analog Devices |
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ADP1875-0.3-EVALZ Datasheet(HTML) 4 Page - Analog Devices |
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4 / 44 page  ADP1874/ADP1875 Rev. 0 | Page 4 of 44 Parameter Symbol Test Conditions/Comments Min Typ Max Unit ADP1874ARQZ-0.6/ ADP1875ARQZ-0.6 (600 kHz) 600 kHz On-Time VIN = 5 V, VOUT = 2 V, TJ = 25°C 500 540 580 ns Minimum On-Time VIN = 20 V, VOUT = 0.8 V 82 110 ns Minimum Off-Time 65% duty cycle (maximum) 340 400 ns ADP1874ARQZ-1.0/ ADP1875ARQZ-1.0 (1.0 MHz) 1.0 MHz On-Time VIN = 5 V, VOUT = 2 V, TJ = 25°C 285 312 340 ns Minimum On-Time VIN = 20 V 52 85 ns Minimum Off-Time 45% duty cycle (maximum) 340 400 ns OUTPUT DRIVER CHARACTERISTICS High-Side Driver Output Source Resistance2 ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V) 2.25 3 Ω Output Sink Resistance2 ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V) 0.70 1 Ω Rise Time3 tr, DRVH BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 59) 25 ns Fall Time3 tf, DRVH BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 60) 11 ns Low-Side Driver Output Source Resistance2 ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V) 1.6 2.2 Ω Output Sink Resistance2 ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V) 0.7 1 Ω Rise Time3 tr,DRVL VREG = 5.0 V, CIN = 4.3 nF (see Figure 60) 18 ns Fall Time3 tf,DRVL VREG = 5.0 V, CIN = 4.3 nF (see Figure 59) 16 ns Propagation Delays DRVL Fall to DRVH Rise3 ttpdhDRVH BST − SW = 4.4 V (see Figure 59) 15.4 ns DRVH Fall to DRVL Rise3 ttpdhDRVL BST − SW = 4.4 V (see Figure 60) 18 ns SW Leakage Current ISWLEAK BST = 25 V, SW = 20 V, VREG = 5 V 110 μA Integrated Rectifier Channel Impedance ISINK = 10 mA 22 Ω PRECISION ENABLE THRESHOLD Logic High Level VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V 605 634 663 mV Enable Hysteresis VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V 31 mV COMP VOLTAGE COMP Clamp Low Voltage VCOMP(LOW) Tie EN pin to VREG to enable device (2.75 V ≤ VREG ≤ 5.5 V) 0.47 V COMP Clamp High Voltage VCOMP(HIGH) (2.75 V ≤ VREG ≤ 5.5 V) 2.55 V COMP Zero Current Threshold VCOMP_ZCT (2.75 V ≤ VREG ≤ 5.5 V) 1.15 V THERMAL SHUTDOWN TTMSD Thermal Shutdown Threshold Rising temperature 155 °C Thermal Shutdown Hysteresis 15 °C CURRENT LIMIT Hiccup Current Limit Timing COMP = 2.4 V 6 ms OVERVOLTAGE AND POWER GOOD THRESHOLDS PGOOD FB Power Good Threshold FBPGD VFB rising during system power-up 542 566 mV FB Power Good Hysteresis 30 mV FB Overvoltage Threshold FBOV VFB rising during overvoltage event, IPGOOD = 1 mA 691 710 mV FB Overvoltage Hysteresis 30 mV PGOOD Low Voltage During Sink VPGOOD IPGOOD = 1 mA 143 200 mV PGOOD Leakage Current PGOOD = 5 V 1 400 nA |
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