BUL53BSMD datasheet(1/2 Pages) SEME-LAB

No. de pieza	BUL53BSMD

Descripción Electrónicos	ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE, HIGH SPEED NPN SILICON POWER TRANSISTOR

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Fabricante Electrónico	SEME-LAB [Seme LAB]

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BUL53BSMD

Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail: sales@semelab.co.uk

Website: http://www.semelab.co.uk

Prelim. 7/00

VCBO

Collector – Base Voltage

VCEO

Collector – Emitter Voltage (IB = 0)

VEBO

Emitter – Base Voltage (IC = 0)

IC

Collector Current

IC(PK)

Peak Collector Current

IB

Base Current

PD

Power Dissipation

R?

Thermal Impedance (when mounted on thermally conducting PCB)

Tj

Maximum Junction Temperature

Tstg

Storage Temperature Range

500V

250V

10V

12A

20A

3A

60W

3.0°C/W

200°C

–55 to +200°C

MECHANICAL DATA

Dimensions in mm

3. 60 ( 0. 142)

Ma x .

3. 70 ( 0. 146)

3. 41 ( 0. 134)

3. 70 ( 0. 146)

3. 41 ( 0. 134)

0. 89

( 0 . 035)

mi n .

9. 67 ( 0. 381)

9. 38 ( 0. 369)

11. 58 ( 0 . 4 56)

11. 28 ( 0 . 4 44)

0. 50 ( 0. 020 )

0. 26 ( 0. 010 )

13

2

ADVANCED DISTRIBUTED

BASE DESIGN

HIGH VOLTAGE, HIGH SPEED NPN

SILICON POWER TRANSISTOR

SMD1

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

• Multi-Base design for efficient energy

distribution across the chip.

• SIgnificantly improved switching and energy

ratings across full temperature range.

• Ion implant and high accuracy masking for

tight control of characteristics from batch to

batch.

• Triple guard rings for improved control of

high voltages.

• CERAMIC SURFACE MOUNT PACKAGE

• FULL MIL/AEROSPACE TEMPERATURE

RANGE

• SCREENING OPTIONS FOR MILITARY AND

SPACE APPLICATIONS

• SEMEFAB DESIGNED AND DIFFUSED DIE

• HIGH VOLTAGE (VCBO = 800V)

• FAST SWITCHING (tf = 100ns)

• HIGH ENERGY RATING

Pad 1 – Base

Pad 2 – Collector

Pad 3 – Emitter

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