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2N6766 Datasheet(PDF) 2 Page - Microsemi Corporation |
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2N6766 Datasheet(HTML) 2 Page - Microsemi Corporation |
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2 / 5 page  TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com T4-LDS-0043 Rev. 2 (101484) Page 2 of 5 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Gate Charge: Qg(on) Qgs Qgd nC On-State Gate Charge Gate to Source Charge Gate to Drain Charge VGS = 10V, ID = 14A VDS = 50V 110 18 65 SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Min. Max. Unit Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 14A, VGS = 10Vdc, Gate drive impedance = 2.35 Ω, VDD = 200Vdc td(on) tr td(off) tf 35 190 170 130 ns Diode Reverse Recovery Time di/dt ≤ 100A/µs, VDD ≤ 30V, IF = 14A trr 1200 ns |
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