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SMG2334NE Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

No. de pieza SMG2334NE
Descripción Electrónicos  N-Channel Enhancement MOSFET
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Fabricante Electrónico  SECOS [SeCoS Halbleitertechnologie GmbH]
Página de inicio  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SMG2334NE Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SMG2334NE
3.5 A, 30 V, RDS(ON) 60 m
N-Channel Enhancement MOSFET
14-Jul-2010 Rev. A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN TYP MAX UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
0.6
-
-
V
VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS = 0V, VGS= 4V
-
-
1
VDS = 24V, VGS= 0V
Zero Gate Voltage Drain Current
IDSS
-
-
25
μA
VDS = 24V, VGS= 0V, TJ=55°C
On-State Drain Current
A
ID(ON)
6
-
-
A
VDS = 5V, VGS= 4.5V
-
-
60
VGS= 4.5V, ID = 3.5A
Drain-Source On-Resistance
A
RDS(ON)
-
-
82
mΩ
VGS= 2.5V, ID = 3A
Forward Transconductance
A
gFS
-
6.9
-
S
VDS= 15V,,ID = 3.5A
Diode Forward Voltage
VSD
-
0.8
-
V
IS= 2.3A, VGS= 0V
Dynamic
b
Total Gate Charge
Qg
-
6.3
-
Gate-Source Charge
Qgs
-
0.9
-
Gate-Drain Charge
Qgd
-
1.9
-
nC
ID= 3.5A
VDS= 15V
VGS= 2.5V
Turn-On Delay Time
Td(ON)
-
16
-
Rise Time
Tr
-
5
-
Turn-Off Delay Time
Td(OFF)
-
23
-
Fall Time
Tf
-
3
-
nS
ID= 1A, VDD= 25V
VGEN= 10V
RL= 25Ω
Notes
a.
Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.


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