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KF4N20LD Datasheet(PDF) 1 Page - KEC(Korea Electronics) |
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KF4N20LD Datasheet(HTML) 1 Page - KEC(Korea Electronics) |
1 / 6 page 2010. 8. 20 1/6 SEMICONDUCTOR TECHNICAL DATA KF4N20LD/I N CHANNEL MOS FIELD EFFECT TRANSISTOR Revision No : 0 General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES ・VDSS(Min.)= 200V, ID= 3.6A ・Drain-Source ON Resistance : RDS(ON)=1.05 Ω(max) @VGS =10V ・Qg(typ.) =2.9nC ・Vth(Max.)= 2V MAXIMUM RATING (Tc=25 ℃) * : Drain current limited by maximum junction temperature. CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 200 V Gate-Source Voltage VGSS ±20 V Drain Current @TC=25℃ ID 3.6 A @TC=100℃ 2.2 Pulsed (Note1) IDP 7* Single Pulsed Avalanche Energy (Note 2) EAS 52 mJ Repetitive Avalanche Energy (Note 1) EAR 3 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 5.5 V/ns Drain Power Dissipation TC=25℃ PD 31 W Derate above25 ℃ 0.25 W/ ℃ Maximum Junction Temperature Tj 150 ℃ Storage Temperature Range Tstg -55 ~150 ℃ Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 4.0 ℃/W Thermal Resistance, Junction-to- Ambient RthJA 110 ℃/W DPAK (1) DIM MILLIMETERS A A B B C C D D F FF H G K G J L K L M 0.96 MAX 0.90 MAX E E M N H 0.70 MIN N 12 3 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ J 1. ANODE 2. CATHODE 3. ANODE IPAK(1) 123 A A B C C D E F FF G G H H J J L L 0.96 MAX K M P M N P N 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 DIM MILLIMETERS 1. ANODE 2. CATHODE 3. ANODE PIN CONNECTION KF4N20LD KF4N20LI |
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