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L6229Q Datasheet(PDF) 11 Page - STMicroelectronics

No. de pieza L6229Q
Descripción Electrónicos  DMOS driver for three-phase brushless DC motor
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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L6229Q
Circuit description
Doc ID 15209 Rev 3
11/28
5
Circuit description
5.1
Power stages and charge pump
The L6229Q integrates a three-phase bridge, which consists of 6 power MOSFETs
connected as shown on the block diagram (see Figure 1). each power MOS has an
RDS(ON) = 0.73 Ω (typical value @ 25 °C) with intrinsic fast freewheeling diode. Switching
patterns are generated by the PWM current controller and the hall effect sensor decoding
logic (see relative paragraph 3.3 and 3.5). Cross conduction protection is implemented by
using a dead time (tDT = 1 µs typical value) set by internal timing circuit between the turn off
and turn on of two power MOSFETs in one leg of a bridge.
Pins VSA and VSB must be connected together to the supply voltage (VS).
Using N-channel power MOS for the upper transistors in the bridge requires a gate drive
voltage above the power supply voltage. The bootstrapped supply (VBOOT) is obtained
through an internal oscillator and few external components to realize a charge pump circuit
as shown in Figure 5. The oscillator output (pin VCP) is a square wave at 600 kHz (typically)
with 10 V amplitude. Recommended values/part numbers for the charge pump circuit are
shown in Table 7.
Figure 5.
Charge pump circuit
Table 7.
Charge pump external component values
Component
Value
CBOOT
220 nF
CP
10 nF
D1
1N4148
D2
1N4148
D2
CBOOT
D1
CP
VS
VSA
VCP
VBOOT
VSB
D01IN1328


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