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2N4123 Datasheet(PDF) 1 Page - ON Semiconductor |
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2N4123 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 6 page © Semiconductor Components Industries, LLC, 2008 November, 2008 − Rev. 4 1 Publication Order Number: 2N4123/D 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage 2N4123 2N4124 VCEO 30 25 Vdc Collector−Base Voltage 2N4123 2N4124 VCBO 40 30 Vdc Emitter−Base Voltage VEBO 5.0 Vdc Collector Current − Continuous IC 200 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the RecommendedOperating Conditions may affect device reliability. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com COLLECTOR 3 2 BASE 1 EMITTER x = 3 or 4 A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) MARKING DIAGRAM 2N 412x AYWW G G 2N4124G TO−92 (Pb−Free) 5000 Units / Bulk Device Package Shipping† 2N4123RLRM TO−92 2000 / Tape & Ammo ORDERING INFORMATION 1 2 3 1 2 BENT LEAD TAPE & REEL AMMO PACK STRAIGHT LEAD BULK PACK 3 TO−92 CASE 29 STYLE 1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
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