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STD123ASF Datasheet(Hoja de datos) 1 Page - KODENSHI KOREA CORP.

No. de Pieza. STD123ASF
Descripción  NPN Silicon Transistor
Descarga  4 Pages
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Fabricante  KODENSHI [KODENSHI KOREA CORP.]
Página de inicio  http://www.kodenshi.co.kr
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KSD-T5C077-000
1
STD123ASF
NPN Silicon Transistor
PIN Connection
SOT-23F
Features
• High β& low saturation transistor.
hFE=400 Min. @VCE=1V, Ic=100mA
• Suitable for large current drive directly.
• Application for IRED Drive transistor in remote
transmitter.
Ordering Information
Type NO.
Marking
Package Code
STD123ASF
12A □
SOT-23F
Device Code ② Year&Week Code
Absolute maximum ratings
(Ta=25
°C)
Characteristic
Symbol
Ratings
Unit
Collector-Base voltage
VCBO
10
V
Collector-Emitter voltage
VCEO
6
V
Emitter-Base voltage
VEBO
3
V
Collector current
IC
1
A
Collector dissipation
PC*
350
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-55~150
°C
* : Package mounted on 99.5% alumina 10
×8×0.1mm
Electrical Characteristics
(Ta=25
°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-Base breakdown voltage
BVCBO
IC=50μA, IE=0
10
-
-
V
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
6
-
-
V
Emitter-Base breakdown voltage
BVEBO
IE=50μA, IC=0
3
-
-
V
Collector cut-off current
ICBO
VCB=10V, IE=0
-
-
0.1
μA
Emitter cut-off current
IEBO
VEB=3V, IC=0
-
-
0.1
μA
DC current gain
hFE
VCE=1V, IC=100mA
400
-
-
-
Collector-Emitter saturation voltage
VCE(sat)
IC=500mA, IB=50mA
-
0.1
0.3
V
Transistor frequency
fT
VCE=5V, IC=50mA
-
260
-
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
5
-
pF
On resistance
RON
f=1KHz, IB=1mA, VIN=0.3V
-
0.6
-
Ω
1
2
3




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