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IRLHS6242PBF Datasheet(PDF) 2 Page - International Rectifier

No. de pieza IRLHS6242PBF
Descripción Electrónicos  HEXFET Power MOSFET
Download  9 Pages
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Fabricante Electrónico  IRF [International Rectifier]
Página de inicio  http://www.irf.com
Logo IRF - International Rectifier

IRLHS6242PBF Datasheet(HTML) 2 Page - International Rectifier

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IRLHS6242PbF
2
www.irf.com
S
D
G
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Package is limited to 12A by die-source to lead-frame bonding technology.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 ich square copper board.
… Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
‡ Calculated continuous current based on maximum allowable junction temperature.
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
20
–––
–––
V
ΔΒVDSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
6.8
–––
mV/°C
RDS(on)
Static Drain-to-Source On-Resistance
–––
9.4
11.7
–––
12.4
15.5
VGS(th)
Gate Threshold Voltage
0.5
0.8
1.1
V
ΔVGS(th)
Gate Threshold Voltage Coefficient
–––
-4.2
–––
mV/°C
IDSS
Drain-to-Source Leakage Current
–––
–––
1.0
–––
–––
150
IGSS
Gate-to-Source Forward Leakage
–––
–––
100
Gate-to-Source Reverse Leakage
–––
–––
-100
gfs
Forward Transconductance
36
–––
–––
S
Qg
Total Gate Charge
h
–––
14
–––
VDS = 10V
Qgs
Gate-to-Source Charge
h
–––
1.5
–––
Qgd
Gate-to-Drain Charge
h
–––
6.3
–––
RG
Gate Resistance
–––
2.1
–––
Ω
td(on)
Turn-On Delay Time
–––
5.8
–––
tr
Rise Time
–––
15
–––
td(off)
Turn-Off Delay Time
–––
19
–––
tf
Fall Time
–––
13
–––
Ciss
Input Capacitance
–––
1110
–––
Coss
Output Capacitance
–––
260
–––
Crss
Reverse Transfer Capacitance
–––
180
–––
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
Ù
VSD
Diode Forward Voltage
–––
–––
1.2
V
trr
Reverse Recovery Time
–––
15
23
ns
Qrr
Reverse Recovery Charge
–––
12
18
nC
ton
Forward Turn-On Time
Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC
VGS = 4.5V
VGS = 12V
VGS = -12V
–––
–––
88
–––
–––
22
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 1mA
VGS = 4.5V, ID = 8.5A ed
Conditions
See Fig.15
ƒ = 1.0MHz
TJ = 25°C, IF = 8.5Ad, VDD = 10V
di/dt = 210A/μs
TJ = 25°C, IS = 8.5Ad, VGS = 0V e
showing the
integral reverse
p-n junction diode.
RG=1.8
Ω
VDS = 10V, ID = 8.5Ad
VDS = 16V, VGS = 0V, TJ = 125°C
μA
ID = 8.5Ad (See Fig.17 & 18)
ID = 8.5A
VGS = 0V
VDS = 10V
VDS = 16V, VGS = 0V
VDS = VGS, ID = 10μA
VGS = 2.5V, ID = 8.5A ed
m
Ω
VDD = 10V, VGS = 4.5V e
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC (Bottom)
Junction-to-Case
g
–––
13
RθJC (Top)
Junction-to-Case
g
–––
94
°C/W
RθJA
Junction-to-Ambient
f
–––
63
RθJA (<10s)
Junction-to-Ambient
f
–––
46


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