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2SC5876 Datasheet(PDF) 1 Page - Rohm |
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2SC5876 Datasheet(HTML) 1 Page - Rohm |
1 / 4 page 1/3 www.rohm.com ○ c 2011 ROHM Co., Ltd. All rights reserved. 2011.03 - Rev.B Medium power transistor (60V, 0.5A) 2SC5876 Features Dimensions (Unit : mm) 1) High speed switching. (Tf : Typ. : 80ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2088 Applications Small signal low frequency amplifier High speed switching Structure NPN Silicon epitaxial planar transistor Packaging specifications Taping 2SC5876 Type T106 3000 Package Basic ordering unit (pieces) Code Absolute maximum ratings (Ta=25 C) Parameter V V V A mW ∗1 Pw=10ms ∗2 Each terminal mounted on a recommended land. ∗2 ∗1 °C A °C VCBO VCEO IC PC Tj VEBO ICP Tstg Symbol 60 60 6 0.5 1.0 200 150 −55 to +150 Limits Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Each lead has same dimensions Abbreviated symbol : VS UMT3 1.25 2.1 0.1Min. (1)Emitter (2)Base (3)Collector |
Número de pieza similar - 2SC5876_11 |
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Descripción similar - 2SC5876_11 |
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