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BD35390FJ Datasheet(PDF) 8 Page - Rohm

No. de pieza BD35390FJ
Descripción Electrónicos  Termination Regulator for DDR-SDRAMs
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Fabricante Electrónico  ROHM [Rohm]
Página de inicio  http://www.rohm.com
Logo ROHM - Rohm

BD35390FJ Datasheet(HTML) 8 Page - Rohm

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BD35390FJ
Technical Note
8/10
www.rohm.com
2009.10 - Rev.A
© 2009 ROHM Co., Ltd. All rights reserved.
Note for Use
1.Absolute maximum ratings
For the present product, thoroughgoing quality control is carried out, but in the event that applied voltage, working
temperature range, and other absolute maximum rating are exceeded, the present product may be destroyed. Because
it is unable to identify the short mode, open mode, etc., if any special mode is assumed, which exceeds the absolute
maximum rating, physical safety measures are requested to be taken, such as fuses, etc.
2.GND potential
Bring the GND terminal potential to the minimum potential in any operating condition.
3.Thermal design
Consider allowable loss (Pd) under actual working condition and carry out thermal design with sufficient margin provided.
4.Terminal-to-terminal short-circuit and erroneous mounting
When the present IC is mounted to a printed circuit board, take utmost care to direction of IC and displacement. In the
event that the IC is mounted erroneously, IC may be destroyed. In the event of short-circuit caused by foreign matter that
enters in a clearance between outputs or output and power-GND, the IC may be destroyed.
5.Operation in strong electromagnetic field
The use of the present IC in the strong electromagnetic field may result in maloperation, to which care must be taken.
6.Built-in thermal shutdown protection circuit
The present IC incorporates a thermal shutdown protection circuit (TSD circuit). The working temperature is 175°C
(standard value) and has a -15°C (standard value) hysteresis width. When the IC chip temperature rises and the TSD
circuit operates, the output terminal is brought to the OFF state. The built-in thermal shutdown protection circuit (TSD
circuit) is first and foremost intended for interrupt IC from thermal runaway, and is not intended to protect and warrant the
IC. Consequently, never attempt to continuously use the IC after this circuit is activated or to use the circuit with the
activation of the circuit premised.
7.Capacitor across output and GND
In the event a large capacitor is connected across output and GND, when Vcc and VIN are short-circuited with 0V or GND
for some kind of reasons, current charged in the capacitor flows into the output and may destroy the IC. Use a capacitor
smaller than 1000 μF between output and GND.
8.Inspection by set substrate
In the event a capacitor is connected to a pin with low impedance at the time of inspection with a set substrate, there is a
fear of applying stress to the IC. Therefore, be sure to discharge electricity for every process. As electrostatic
measures, provide grounding in the assembly process, and take utmost care in transportation and storage. Furthermore,
when the set substrate is connected to a jig in the inspection process, be sure to turn OFF power supply to connect the jig
and be sure to turn OFF power supply to remove the jig.
9. Inputs to IC terminals
This device is a monolithic IC with P
+ isolation between P-substrate and each element as illustrated below. This P-layer
and the N-layer of each element form a PN junction which works as:
a diode if the electric potentials at the terminals satisfy the following relationship; GND>Terminal A>Terminal B, or
a parasitic transistor if the electric potentials at the terminals satisfy the following relationship; Terminal B>GND Terminal A.
The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,
and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such
manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in
activation of parasitic elements.
Resistor
Transistor (NPN)
N
N
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin A
N
N
P
+
P
+
P
P substrate
GND
Parasitic element
Pin B
C
B
E
N
GND
Pin A
Parasitic
element
Pin B
Other adjacent elements
E
B
C
GND
Parasitic
element


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