N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

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Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

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Document Number 8263

Issue 2

Page 1 of 3

2N6660

•

VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω

•

Fast Switching

•

Low Threshold Voltage (Logic Level)

•

Low CISS

•

Integral Source-Drain Body Diode

•

Hermetic Metal TO39 Package

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High Reliability Screening Options Available

C = 25°C unless otherwise stated)

VDS

Drain – Source Voltage

60V

VGS

Gate – Source Voltage

±20V

ID

Continuous Drain Current

TC = 25°C

1.0A

IDM

Pulsed Drain Current

(1)

3.0A

PD

Total Power Dissipation at

TC ≤ 25°C

5W

De-rate TC > 25°C

40mW/°C

PD

Total Power Dissipation at

TA ≤ 25°C

725mW

De-rate TA > 25°C

5.8mW/°C

TJ

Operating Temperature Range

-65 to +150°C

Tstg

Storage Temperature Range

-65 to +150°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

25

°C/W

RθJA

Thermal Resistance, Junction To Ambient

172

°C/W

Notes

Notes

Notes

Notes

(1)

Repetitive Rating: Pulse width limited by maximum junction temperature

(2)

Pulse Width ≤ 300us, δ ≤ 2%