SILICON MULTI-EPITAXIAL

NPN TRANSISTOR

2N6678M3A

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 9199

Issue 1

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ

Max.

Units

V(BR)CEO

(1)

Collector-Emitter

Breakdown Voltage

IC = 20mA

400

V

VCE = 400V

VBE = -1.5V

500

nA

VCE = 650V

VBE = -1.5V

1.0

ICEX

Collector Cut-Off Current

TA = 125°C

50

µA

ICBO

Collector Cut-Off Current

VCB = 650V

IE = 0

1.0

IEBO

Emitter Cut-Off Current

VEB = 8V

IC = 0

2

mA

IC = 15A

IB = 3A

1.0

VCE(sat)

(1)

Collector-Emitter Saturation

Voltage

TA = 125°C

2

VBE(sat)

(1)

Base-Emitter Saturation

Voltage

IC = 15A

IB = 3A

1.5

V

IC = 1.0A

VCE = 3V

15

40

IC = 15A

VCE = 3V

8

20

hFE

(1)

Forward-current transfer

ratio

`

TA = -55°C

4

DYNAMIC CHARACTERISTICS

IC = 1.0A

VCE = 10V

| hfe |

Small signal forward-current

transfer ratio

f = 5MHz

3

10

VCB = 10V

IE = 0

Cobo

Output Capacitance

f = 1.0MHz

150

500

pF

td

Delay Time

IC = 15A

VCC = 200V

0.1

tr

Rise Time

IB1 = 3A

0.6

ts

Storage Time

IC = 15A

VCC = 200V

2.5

tf

Fall Time

IB1 = -IB2 = 3A

0.5

µs

Notes

Notes

Notes

Notes

(1)

Pulse Width ≤ 300us, δ ≤ 2%