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SML1310IGF Datasheet(PDF) 2 Page - Seme LAB |
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SML1310IGF Datasheet(HTML) 2 Page - Seme LAB |
2 / 2 page Parameter Test Conditions Min. Typ. Max. Unit SOURCE – DRAIN DIODE CHARACTERISTICS SML1310IGF VGS = 0 ID = 250µA VDS = VGS ID = 250µA VGS ≤ 20V VGS = -20V VDS = 100V,VGS =0V VDS = 80V, VGS =0V TC = 125°C VGS = 10V ID = 18A VDS = 25V ID = 18A VGS = 0V VDS = 25V F = 1MHz VDD = 50V ID = 18A RG = 3.6 Ω VGS =10V Modified MOSPOWER smbol showing the integral P-N Junction rectifier IS = 18A ,VGS = 0V, TC = 25°C TJ = 25°CIF =18A di / dt = 100A/µs ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) V nA µA Ω S pF ns A V ns µc Drain – Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current Static Drain – Source On–State Resistance1 Forward Transductance 1 Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn–On Delay Time Rise Time Turn–Off Delay Time Fall Time Continuous Source Current (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge 100 2.0 4.0 100 -100 25 250 0.44 14 1872 463 234 19 85 65 54 18 72 1.3 270 1.8 BVDSS VGS(th) IGSS IGSS IDSS RDS(on) Gfs Ciss Coss Crss td(on) tr td(off) tf IS ISM VSD trr Qrr STATIC ELECTRICAL RATINGS Notes 1) Pulse Test: Pulse Width ≤ 300ms, δ≤ 2% DYNAMIC CHARACTERISTICS , 5 / Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Document Number 6027 Issue 1 |
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