STF34NM60N datasheet(4/17 Pages) STMICROELECTRONICS

No. de pieza	STF34NM60N

Descripción Electrónicos	N-channel 600 V, 0.092 廓, 29 A MDmesh??II Power MOSFET TO-220, TO-247, TO-220FP

Download	17 Pages

Scroll/Zoom	100%

Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

Logo

4 / 17 page

Electrical characteristics

STF34NM60N, STP34NM60N, STW34NM60N

4/17

Doc ID 17740 Rev 3

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Value

Unit

Min.

Typ.

Max.

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

600

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = Max rating

VDS = Max rating @125 °C

1

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

3

4

V

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 14.5 A

0.092

0.105

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

2722

173

1.75

-

pF

Coss eq.

(1)

1.

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

capacitance

VGS = 0, VDS = 0 to 480 V

-

458

-

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD =300 V, ID = 14.5 A

RG =4.7 Ω, VGS = 10 V

(see Figure 23),

(see Figure 18)

-

17

34

106

67

-

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 480 V, ID = 29 A,

VGS = 10 V,

(see Figure 19)

-

83.6

14

45

-

nC

Rg

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20 mV

Open drain

-2.9

-

Ω

Número de pieza similar - STF34NM60N

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STF34NM60ND	1Mb / 22P	N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247
Inchange Semiconductor ...	STF34NM60ND	261Kb / 2P	isc N-Channel MOSFET Transistor

More results

Descripción similar - STF34NM60N

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
STMicroelectronics	STW36NM60N	869Kb / 13P	N-channel 600 V, 0.092 Ω, 29 A, MDmesh™ II Power MOSFET in TO-247 June 2011
	STB30NM60N	768Kb / 18P	N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK
	STB25NM60NX	578Kb / 18P	N-channel 600 V, 0.130 廓 , 21 A, MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
	STB23NM50N	867Kb / 21P	N-channel 500 V, 0.162 廓, 17 A TO-220, TO-220FP, TO-247, D짼PAK MDmesh??II Power MOSFET
	STF18NM60N	1Mb / 21P	N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247
	STP18NM60N	1Mb / 21P	N-channel 600 V, 0.26 廓 typ., 13 A MDmesh??II Power MOSFET in D2PAK, TO-220FP, TO-220 and TO-247 October 2012 Rev 4
	STI18NM60N	998Kb / 18P	N-channel 600 V, 0.27 廓, 13 A MDmesh??II Power MOSFET in TO-220, TO-220FP, TO-247, D짼PAK and I짼PAK
	STB16NM50N	554Kb / 18P	N-channel 500 V - 0.21 廓 - 15 A MDmesh??II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP
	STX25NM50N	616Kb / 18P	N-channel 500 V, 0.11 廓, 22 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, D2PAK, TO-247
	STP30NM50N	628Kb / 18P	N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

More results

STF34NM60N Datasheet(PDF) 4 Page - STMicroelectronics

STF34NM60N Datasheet(HTML) 4 Page - STMicroelectronics

Número de pieza similar - STF34NM60N

Descripción similar - STF34NM60N

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

Datasheet Descarga

Enlace URL