STP34NM60N datasheet(5/17 Pages) STMICROELECTRONICS

No. de pieza	STP34NM60N

Descripción Electrónicos	N-channel 600 V, 0.092 廓, 29 A MDmesh??II Power MOSFET TO-220, TO-247, TO-220FP

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

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STF34NM60N, STP34NM60N, STW34NM60N

Electrical characteristics

Doc ID 17740 Rev 3

5/17

Table 6.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

29

116

A

VSD

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

ISD = 29 A, VGS = 0

-

1.6

V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 29 A, VDD = 60 V

di/dt=100 A/µs

(see Figure 20)

-

408

8

39

ns

nC

A

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 29 A,VDD = 60 V

di/dt=100 A/µs,

TJ = 150 °C

(see Figure 20)

-

480

10

42

ns

nC

A

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STP34NM60N Datasheet(PDF) 5 Page - STMicroelectronics

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