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2SA1235A Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1235A Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor 2SA1235A Document number: BL/SSSTC094 www.galaxycn.com Rev.A 1 FEATURES Small collector to emitter saturation voltage VCE(sat)=-0.3V max(@IC=-100mA,IB=-10mA). Excellent lineary DC forward current gain. Super mini package for easy mounting. APPLICATIONS PNP epitaxial type transistor designed for low frequency. SOT-23 Voltage amplify application. ORDERING INFORMATION Type No. Marking Package Code 2SA1235A ME/MF/MG SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -200 mA PC Collector Dissipation 150 mW Tj,Tstg Junction and Storage Temperature -55~125 ℃ Pb Lead-free |
Número de pieza similar - 2SA1235A_08 |
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Descripción similar - 2SA1235A_08 |
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