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1N4150 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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1N4150 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2011-09-23 Dimensions - Maße [mm] Max. power dissipation Max. Verlustleistung 500 mW Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...100 V Glass case Glasgehäuse DO-35 (SOD-27) Weight approx. Gewicht ca. 0.13 g Equivalent SMD-version Äquvalente SMD-Ausführung LL4148, LL4150 LL4151, LL4148 Standard packaging taped in ammo pack Standard Lieferform gegurtet in Ammo-Pack Maximum ratings (TA = 25°C) Grenzwerte (TA = 25°C) Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1) 1N4148 75 100 1N4150 50 50 1N4151 50 75 1N4448 75 100 Type Typ 1N4148 1N4448 1N4150 1N4151 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last IFAV 150 mA 2) 300 mA 2) 200 mA 2) Repetitive peak forward current Periodischer Spitzenstrom IFRM 500 mA 2) 600 mA 2) 500 mA 2) Non-repetitive peak forward current Stoßstrom-Grenzwert tp = 1 µs Tj = 25°C IFSM 2000 mA 4000 mA 2000 mA Max. power dissipation Max. Verlustleistung Ptot 500 mW 2) Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+200°C -50...+200°C 1 Tested with pulses IR = 100 µA, tp = 300 µs, duty cycle ≤ 2% Gemessen mit Impulsen IR = 100 µA, tp = 300 µs, Schaltverhältnis ≤ 2% 2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden © Diotec Semiconductor AG http://www.diotec.com/ 1 Ø 1.9 Ø 0.52 |
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