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1N3768 Datasheet(PDF) 1 Page - Diotec Semiconductor

No. de pieza 1N3768
Descripción Electrónicos  Silicon-Power-Rectifiers
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Fabricante Electrónico  DIOTEC [Diotec Semiconductor]
Página de inicio  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N3768 Datasheet(HTML) 1 Page - Diotec Semiconductor

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1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307
1N1183 ... 1N1190, 1N3766, 1N3768,
PBY301 ... PB307
Silicon-Power-Rectifiers
Silizium-Leistungs-Gleichrichter
Version 2007-05-09
Dimensions - Maße [mm]
Nominal Current
Nennstrom
35 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
50 ... 1000 V
Metal case
Metallgehäuse
DO-5
Weight approx.
Gewicht ca.
6 g
Standard polarity: Cathode to stud / Kathode am Gewinde
Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R)
Standard packaging: bulk
Standard Lieferform: lose im Karton
Maximum ratings
Grenzwerte
Type
Typ
Repetive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N1183 = PBY301
50
60
1N1184 = PBY302
100
120
1N1186 = PBY303
200
240
1N1188 = PBY304
400
480
1N1190 = PBY305
600
720
1N3766 = PBY306
800
1000
1N3768 = PBY307
1000
1200
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
35 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
110 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
450/500 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
1000 A2s
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-65...+175°C
-65...+175°C
1
Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø 4+0.5
M6
SW17
Type
13.6


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