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1N3671 Datasheet(PDF) 1 Page - Diotec Semiconductor |
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1N3671 Datasheet(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page 1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 1N1199A ... 1N1206A, 1N3671, 1N3673, PBY271 ... PB277 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2007-05-09 Dimensions - Maße [mm] Nominal Current Nennstrom 12 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50 ... 1000 V Metal case Metallgehäuse DO-4 Weight approx. – Gewicht ca. 5.5 g Standard polarity: Cathode to stud / Kathode am Gewinde Index R: Anode to stud / Anode am Gewinde (e. g. 1N1199AR) Standard packaging: bulk Standard Lieferform: lose im Karton Maximum ratings Grenzwerte Type Typ Repetive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 1N1199A = PBY271 50 60 1N1200A = PBY272 100 120 1N1202A = PBY273 200 240 1N1204A = PBY274 400 480 1N1206A = PBY275 600 720 1N3671 = PBY276 800 1000 1N3673 = PBY277 1000 1200 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 85°C IFAV 12 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 40 A 1) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 200/240 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 240 A2s Operating junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -65...+175°C -65...+175°C 1 Max. case temperature TC = 85°C – Max. Gehäusetemperatur TC = 85°C © Diotec Semiconductor AG http://www.diotec.com/ 1 M5 7 Ø2 Type SW11 |
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