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2N7000 Datasheet(PDF) 2 Page - Diotec Semiconductor |
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2N7000 Datasheet(HTML) 2 Page - Diotec Semiconductor |
2 / 2 page 2N7000 Characteristics (Tj = 25°C) Kennwerte (Tj = 25°C) Min. Typ. Max. Drain-Source breakdown voltage – Drain-Source Durchbruchspannung ID = 10 µA V(BR)DSS 60 V Drain-Source leakage current – Drain-Source Leckstrom G short VDS = 48 V VDS = 48 V, Tj = 125°C IDSS IDSS 1 µA 1 mA Gate-Body leakage current – Gate-Substrat Leckstrom VGS = ±15 V ±IGSS 10 nA Gate-Threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS(th) 0.8 V 3 V Drain-Source on-voltage – Drain-Source-Spannung VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VDS(on) 2.5 V 0.45 V Drain-Source on-state resistance – Drain-Source Einschaltwiderstand VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA RDS(on) RDS(on) 5 Ω 6 Ω Forward Transconductance – Übertragungssteilheit VDS = 10 V, ID = 200 mA gFS 100 mS Input Capacitance – Eingangskapazität VDS = 25 V, f = 1 MHz Ciss 60 pF Output Capacitance – Ausgangskapazität VDS = 25 V, f = 1 MHz Coss 25 pF Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 25 V, f = 1 MHz Crss 5 pF Turn-On Delay Time – Einschaltverzögerung VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω ton 10 ns Turn-Off Delay Time – Ausschaltverzögerung VDD= 15 V, RL= 30 Ω, ID= 0.5 A, VGS= 10 V, RG= 25 Ω toff 10 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA < 357 K/W 1) 1 Device mounted on standard PCB material Bauteil montiert auf Standard-Leiterplattenmaterial 2 http://www.diotec.com/ © Diotec Semiconductor AG |
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