2N5878 datasheet(1/3 Pages) ISC

No. de pieza	2N5878

Descripción Electrónicos	Silicon NPN Power Transistors

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5877 2N5878

DESCRIPTION

・With TO-3 package

・Low collector saturation voltage

・Complement to type 2N5875 2N5876

APPLICATIONS

・For general-purpose power amplifier

and switching applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5877

60

VCBO

Collector-base voltage

2N5878

Open emitter

80

V

2N5877

60

VCEO

Collector-emitter voltage

2N5878

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

10

A

ICM

Collector current-peak

20

A

IB

Base current

4

A

PD

Total Power Dissipation

TC=25℃

150

W

Tj

Junction temperature

200

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.17

℃/W

Fig.1 simplified outline (TO-3) and symbol

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2N5878 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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