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2N6388 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6388 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6386 2N6387 2N6388 DESCRIPTION ・With TO-220C package ・Complement to type 2N6666/6667/6668 ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・Designed for general-purpose amplifier and low speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6386 40 2N6387 60 VCBO Collector-base voltage 2N6388 Open emitter 80 V 2N6386 40 2N6387 60 VCEO Collector-emitter voltage 2N6388 Open base 80 V VEBO Emitter-base voltage Open collector 5 V 2N6386 8 IC Collector current-DC 2N6387/6388 10 A ICM Collector current-Pulse 15 A IB Base current-DC 0.25 A PC Collector power dissipation TC=25℃ 65 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ |
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