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2N6578 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6578
Descripción Electrónicos  Silicon NPN Power Transistors
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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2N6578 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

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Inchange Semiconductor
Product Specification
2
Silicon NPN Power Transistors
2N6576 2N6577 2N6578
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
2N6576
60
2N6577
90
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6578
IC=0.2A ;IB=0
120
V
VCEsat-1
Collector-emitter saturation voltage
IC=10A; IB=100mA
2.8
V
VCEsat-2
Collector-emitter saturation voltage
IC=15A ;IB=150mA
4.0
V
VBE sat-1
Base-emitter saturation voltage
IC=10A; IB=100mA
3.5
V
VBE sat-2
Base-emitter saturation voltage
IC=15A ;IB=150mA
4.5
V
2N6576
VCE=60V; IB=0
2N6577
VCE=90V; IB=0
ICEO
Collector cut-off current
2N6578
VCE=120V; IB=0
1.0
mA
2N6576
VCB=60V; IE=0
2N6577
VCB=90V; IE=0
ICBO
Collector cut-off current
2N6578
VCB=120V; IE=0
0.5
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
7.5
mA
hFE-1
DC current gain
IC=0.4A ; VCE=3V
200
hFE-2
DC current gain
IC=4A ; VCE=3V
2000
20000
hFE-3
DC current gain
IC=10A ; VCE=3V
500
5000
hFE-4
DC current gain
IC=15A ; VCE=4V
100
VF
Diode forward voltage
IF=15A
4.5
A
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.46
℃/W


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