2N6702 datasheet(2/3 Pages) ISC

No. de pieza	2N6702

Descripción Electrónicos	Silicon NPN Power Transistors

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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2 / 3 page

Inchange Semiconductor

Product Specification

2

Silicon NPN Power Transistors

2N6702

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VCEO(SUS)

Collector-emitter sustaining voltage

IC=0.01A ;IB=0

90

V

VCEsat-1

Collector-emitter saturation voltage

IC=5A;IB=0.5A

0.8

V

VCEsat-2

Collector-emitter saturation voltage

IC=7A;IB=0.7A

1.5

V

VBE sat

Base-emitter saturation voltage

IC=5A;IB=0.5A

1.5

V

ICEV

Collector cut-off current

VCE=140V;VBE=1.5V

TC=125℃

0.1

1.0

mA

IEBO

Emitter cut-off current

VBE=7V; IC=0

0.1

mA

hFE-1

DC current gain

IC=0.2A ; VCE=2V

30

hFE-2

DC current gain

IC=5A ; VCE=2V

20

Cob

Output capacitance

IE=0 ; f=0.1MHz,VCB=10V

50

150

pF

fT

Transition frequency

IC=0.5A ; VCE=10V

50

200

MHz

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