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FM28V020-TGTR Datasheet(PDF) 1 Page - Ramtron International Corporation |
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FM28V020-TGTR Datasheet(HTML) 1 Page - Ramtron International Corporation |
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1 / 14 page  Pre-Production This is a product in the pre-production phase of development. Device Ramtron International Corporation characterization is complete and Ramtron does not expect to change the 1850 Ramtron Drive, Colorado Springs, CO 80921 specifications. Ramtron will issue a Product Change Notice if any (800) 545-FRAM, (719) 481-7000 specification changes are made. http://www.ramtron.com Rev. 2.1 June 2011 Page 1 of 14 FM28V020 256Kbit Bytewide F-RAM Memory Features 256Kbit Ferroelectric Nonvolatile RAM Organized as 32K x 8 10 14 Read/Write Cycles NoDelay™ Writes Page Mode Operation Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules No battery concerns Monolithic reliability True surface mount solution, no rework steps Superior for moisture, shock, and vibration Resistant to negative voltage undershoots SRAM Replacement JEDEC 32Kx8 SRAM pinout 70 ns Access Time, 140 ns Cycle Time Low Power Operation 2.0V – 3.6V Power Supply Standby Current 90 A (typ) Active Current 7 mA (typ) Industry Standard Configurations Industrial Temperature -40 C to +85 C 28-pin “Green”/RoHS SOIC (-SG) 32-pin “Green”/RoHS TSOP (-TG) General Description The FM28V020 is a 32K x 8 nonvolatile memory that reads and writes like a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 10 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and virtually unlimited write endurance make F-RAM superior to other types of memory. In-system operation of the FM28V020 is very similar to other RAM devices and can be used as a drop-in replacement for standard SRAM. Read and write cycles may be triggered by /CE or simply by changing the address. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM28V020 ideal for nonvolatile memory applications requiring frequent or rapid writes in the form of an SRAM. Device specifications are guaranteed over the industrial temperature range -40°C to +85°C. Pin Configuration SOIC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A14 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS DQ4 DQ5 DQ6 DQ7 OE A8 A13 WE A9 A10 A11 VDD A12 A7 A6 A5 A4 CE DQ3 Ordering Information FM28V020-SG 28-pin “Green”/RoHS SOIC FM28V020-SGTR 28-pin “Green”/RoHS SOIC, Tape & Reel FM28V020-TG 32-pin “Green”/RoHS TSOP FM28V020-TGTR 32-pin “Green”/RoHS TSOP, Tape & Reel TSOP-I 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC OE A11 A9 A8 A13 WE VDD A14 A12 A7 A6 A5 A4 A3 NC 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 NC A10 CE DQ7 DQ6 DQ5 DQ4 DQ3 VSS DQ2 DQ1 DQ0 A0 A1 A2 NC |
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