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2SC3150 Datasheet(Hoja de datos) 1 Page - Inchange Semiconductor Company Limited

No. de Pieza. 2SC3150
Descripción  isc Silicon NPN Power Transistor
Descarga  3 Pages
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Fabricante  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3150
DESCRIPTION
·High Breakdown Voltage-
: V(BR)CBO= 900V(Min)
·Fast Switching Speed
·Wide Area of Safe Operation
APPLICATIONS
·Designed for switching regulator Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
900
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
10
A
IB
B
Base Current-Continuous
1.5
A
PC
Collector Power Dissipation
@ TC=25℃
50
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn




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