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2SC3264 Datasheet(Hoja de datos) 1 Page - Inchange Semiconductor Company Limited

No. de Pieza. 2SC3264
Descripción  isc Silicon NPN Power Transistor
Descarga  2 Pages
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Fabricante  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3264
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= 230V(Min)
·Good Linearity of hFE
·Complement to Type 2SA1295
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
230
V
VCEO
Collector-Emitter Voltage
230
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
17
A
IB
B
Base Current-Continuous
5
A
PC
Collector Power Dissipation
@ TC=25℃
200
W
TJ
Junction Temperature
150
Tstg
Storage Temperature Range
-55~150
isc Website:www.iscsemi.cn




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