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2SC5517 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC5517 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5517 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 7 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A 1.5 V ICBO Collector Cutoff Current VCB= 1000V; IE= 0 VCB= 1700V; IE= 0 50 1.0 μA mA hFE DC Current Gain IC= 4.5A; VCE= 5V 5 9 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz VECF C-E Diode Forward Voltage IF= 4.5A 2.0 V Switching Times tstg Storage Time 5.0 μs tf Fall Time IC= 4.5A; IB1= 0.9A; IB2= -1.8A 0.5 μs isc Website:www.iscsemi.cn 2 |
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