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2SD1451 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1451 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1451 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=1.2A; IB=0.3A 5.0 V VBEsat Base-emitter saturation voltage IC=1.2A; IB=0.3A 1.5 V ICBO Collector cut-off current VCB=1500V; IE=0 0.5 mA hFE DC current gain IC=0.3A ; VCE=5V 6 VF Diode forward voltage IF=1.5A 2.2 V |
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