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2SD1792 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1792 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1792 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=3A; IB=5mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=5mA 2.0 V ICBO Collector cut-off current VCB=200V; IE=0 0.1 mA ICEO Collector cut-off current VCE=200V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=3A ; VCE=3V 1500 30000 fT Transition frequency IC=0.7A ; VCE=10V 20 MHz Switching times ton Turn-on time 2.0 μs ts Storage time 12 μs tf Fall time IC=3A;IB1=IB2=5mA, RL=10Ω VBB2=4V 5.0 μs |
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