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2SD1912 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1912 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1912 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V 1.0 V ICBO Collector Cutoff Current VCB= 40V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 100 μA hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 70 280 hFE-2 DC Current Gain IC= 3A; VCE= 5V 20 COB Output Capacitance IE= 0; VCB= 10V, f= 1MHz 40 pF fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V 100 MHz hFE-1 Classifications Q R S 70-140 100-200 140-280 isc Website:www.iscsemi.cn 2 |
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