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2SD1932 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1932 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1932 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 B 80 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 4mA B 1.5 V ICBO Collector Cutoff Current VCB= 80V; IE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 3 mA hFE DC Current Gain IC= 2A; VCE= 3V 1000 10000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz 35 pF fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 5V; ftest= 10MHz 40 MHz isc Website:www.iscsemi.cn 2 |
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