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BD241B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BD241B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 3 page Inchange Semiconductor Product Specification Silicon NPN Power Transistors BD241/A/B/C DESCRIPTION ・ ・With TO-220C package ・Complement to type BD242/A/B/C APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT BD241 55 BD241A 70 BD241B 90 VCBO Collector-base voltage BD241C Open emitter 115 V BD241 45 BD241A 60 BD241B 80 VCEO Collector-emitter voltage BD241C Open base 100 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A ICM Collector current-peak 5 A IB Base current 1 A PC Collector power dissipation TC=25℃ 40 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ |
Número de pieza similar - BD241B |
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Descripción similar - BD241B |
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