BDT32B datasheet(2/2 Pages) ISC

No. de pieza	BDT32B

Descripción Electrónicos	isc Silicon PNP Power Transistors

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistors

BDT32/A/B/C

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BDT32

-40

BDT 32A

-60

BDT 32B

-80

VCEO(SUS)

Collector-Emitter

Sustaining Voltage

BDT 32C

IC= -30mA; IB= 0

-100

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -0.375A

B

-1.2

V

VBE(on)

Base-Emitter On Voltage

IC= -3A ; VCE= -4V

-1.8

V

ICES

Collector Cutoff Current

VCE= VCEOmax; VBE= 0

-0.2

mA

BDT32/A

VCE= -30V; IB= 0

B

ICEO

Collector Cutoff Current

BDT 32B/C

VCE= -60V; IB= 0

B

-0.1

mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.2

mA

hFE-1

DC Current Gain

IC= -1A ; VCE= -4V

25

hFE-2

DC Current Gain

IC= -3A ; VCE= -4V

10

50

fT

Current-Gain—Bandwidth Product

IC= -0.5A ; VCE= -10V

3

MHz

Switching Times

ton

Turn-On Time

0.3

μs

toff

Turn-Off Time

IC= -1.0A; IB1= -IB2= -0.1A

1.0

μs

isc Website：www.iscsemi.cn

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