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BUS48P Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de Pieza. BUS48P
Descripción  isc Silicon NPN Power Transistor
Descarga  2 Pages
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Fabricante  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUS48P Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUS48P Hoja de datos HTML 1Page - Inchange Semiconductor Company Limited BUS48P Hoja de datos HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUS48P
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
400
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC= 100℃
1.5
2.0
V
VCE (sat)-2
Collector-Emitter Saturation Voltage
IC= 15A ;IB= 3A
5.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC= 100℃
1.6
1.6
V
ICER
Collector Cutoff Current
VCE=rated VCER; RBE= 10Ω
VCE=rated VCER; RBE= 10Ω;TC=125℃
0.5
3.0
mA
ICEV
Collector Cutoff Current
VCE=rated VCES; VBE(off)= 1.5V
VCE=rated VCES; VBE(off)= 1.5V;TC=125℃
0.2
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1
mA
hFE
DC Current Gain
IC= 10A; VCE= 5V
8
COB
Output Capacitance
IE= 0; VCB= 10V, ftest= 1MHz
350
pF
Switching times Resistive Load
td
Delay Time
0.2
μs
tr
Rise Time
0.7
μs
ts
Storage Time
2.0
μs
tf
Fall Time
IC= 10A; IB1= 2A; VCC= 250V;
VBE(off)= 5V, Duty Cycle≤2%
0.4
μs
isc Website:www.iscsemi.cn


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