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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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Motor de Búsqueda de Datasheet de Componentes Electrónicos |
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BUW24 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUW24 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW24 DESCRIPTION ・With TO-3 package ・High dielectric strength ・Short switching time APPLICATIONS ・Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector MAXIMUN RATINGS SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 450 V VCEO Collector-emitter voltage Open base 350 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A IB Base current 3 A PT Total power dissipation Tmb≤25℃ 100 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance from junction to case 1.25 ℃/W Fig.1 simplified outline (TO-3) and symbol |
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