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BAS125-06W Datasheet(PDF) 2 Page - Siemens Semiconductor Group

No. de pieza BAS125-06W
Descripción Electrónicos  Preliminary data Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping application)
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BAS125-06W Datasheet(HTML) 2 Page - Siemens Semiconductor Group

  BAS125-06W Datasheet HTML 1Page - Siemens Semiconductor Group BAS125-06W Datasheet HTML 2Page - Siemens Semiconductor Group BAS125-06W Datasheet HTML 3Page - Siemens Semiconductor Group BAS125-06W Datasheet HTML 4Page - Siemens Semiconductor Group BAS125-06W Datasheet HTML 5Page - Siemens Semiconductor Group  
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Semiconductor Group
2
Dec-20-1996
BAS 125W
Electrical Characteristics at
TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC characteristics
Reverse current
VR = 20 V
VR = 25 V
IR
-
-
-
-
200
150
nA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 35 mA
VF
-
-
-
800
530
385
900
650
400
mV
AC Characteristics
Diode capacitance
VR = 0 V, f = 1 MHz
CT
-
-
1.1
pF
Differential forward resistance
IF = 5 mA, f = 10 kHz
RF
-
16
-


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