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BAS40-04 Datasheet(PDF) 3 Page - Siemens Semiconductor Group

No. de pieza BAS40-04
Descripción Electrónicos  Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping)
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Fabricante Electrónico  SIEMENS [Siemens Semiconductor Group]
Página de inicio  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BAS40-04 Datasheet(HTML) 3 Page - Siemens Semiconductor Group

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Semiconductor Group
3
BAS 40 …
Electrical Characteristics per Diode
at TA = 25 ˚C, unless otherwise specified.
Unit
Values
Parameter
Symbol
min.
typ.
max.
V
Breakdown voltage
IR = 10
µA
V(BR)
40
µA
Reverse current
VR = 30 V
VR = 40 V
IR
1
10
mV
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 40 mA
VF
310
450
720
380
500
1000
Differential forward resistance
IF = 10 mA, f = 10 kHz
rf
–10
pF
Diode capacitance
VR = 0, f = 1 MHz
CT
–45
ps
Charge carrier life time
IF = 25 mA
τ
100
DC characteristics


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