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SI3477DV-T1-GE3 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SI3477DV-T1-GE3 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 11 page www.vishay.com 4 Document Number: 70865 S10-1536-Rev. A, 19-Jul-10 Vishay Siliconix Si3477DV New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Source-Drain Diode Forward Voltage Threshold Voltage 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 TJ = 25 °C TJ = 150 °C V SD - Source-to-Drain Voltage (V) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 μA T J - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0 0.01 0.02 0.03 0.04 0.05 0.06 0 1 234 5 ID = 2.2 A; TJ = 25 °C ID = 2.2 A; TJ = 125 °C ID =9 A; TJ = 125 °C ID = 9 A; TJ =25 °C V GS - Gate-to-Source Voltage (V) 0 5 10 15 20 25 30 Time (s) 10 1000 0.1 0.01 0.001 100 1 Safe Operating Area 100 1 0.1 1 10 100 0.01 10 0.1 TA = 25 °C Single Pulse 1s 10 s Limited by RDS(on)* BVDSS Limited 1ms 100 μs 10 ms DC 100 ms V DS - Drain-to-Source Voltage (V) * V GS > minimum VGS at which RDS(on) is specified |
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