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SI3588DV Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI3588DV Datasheet(HTML) 1 Page - Vishay Siliconix |
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1 / 12 page  Vishay Siliconix Si3588DV Document Number: 71332 S09-2275-Rev. B, 02-Nov-09 www.vishay.com 1 N- and P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs: 1.8 V Rated • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) N-Channel 20 0.080 at VGS = 4.5 V 3.0 0.100 at VGS = 2.5 V 2.6 0.128 at VGS = 1.8 V 2.3 P-Channel - 20 0.145 at VGS = - 4.5 V - 2.2 0.200 at VGS = - 2.5 V - 1.8 0.300 at VGS = - 1.8 V - 1.5 TSOP-6 Top View 6 4 1 2 3 5 2.85 mm 3 mm D2 G2 S1 S2 D1 G1 Ordering Information: Si3588DV-T1-E3 (Lead (Pb)-free) Si3588DV-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 G1 S1 N-Channel MOSFET S2 G2 D2 P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 - 20 V Gate-Source Voltage VGS ± 8 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 3.0 2.5 - 2.2 - 0.57 A TA = 70 °C 2.3 2.0 - 1.8 - 1.5 Pulsed Drain Current IDM ± 8 Continuous Source Current (Diode Conduction)a IS 1.05 0.75 - 1.05 - 0.75 Maximum Power Dissipationa TA = 25 °C PD 1.15 0.83 1.15 0.083 W TA = 70 °C 0.73 0.53 0.73 0.53 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 93 110 °C/W Steady State 130 150 Maximum Junction-to-Foot (Drain) Steady State RthJF 90 90 |
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