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SI4431CDY Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI4431CDY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page 2 Vishay Siliconix SPICE Device Model Si4431CDY www.vishay.com Document Number: 68436 S-81903 ⎯Rev. A, 25-Aug-08 SPECIFICATIONS (T J = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Simulated Data Measured Data Unit Static Gate Threshold Voltage V GS(th) V DS = VGS, ID = −250 μA 1.8 V V GS = −10 V, ID = −7 A 0.026 0.026 Drain-Source On-State Resistance a r DS(on) V GS = −4.5 V, ID = −5.6 A 0.037 0.037 Ω Forward Transconductance a g fs V DS = −15 V, ID = −7 A 10 18 S Diode Forward Voltage V SD I S = −5.6 A −0.81 −0.71 V Dynamic b Input Capacitance C iss 1000 1006 Output Capacitance C oss 183 180 Reverse Transfer Capacitance C rss V DS = −15 V, VGS = 0 V, f = 1 MHz 144 145 pF V DS = −15 V, VGS = −10 V, ID = −7 A 20 25 Total Gate Charge Q g 11 13 Gate-Source Charge Q gs 3.5 3.5 Gate-Drain Charge Q gd V DS = −15 V, VGS = −4.5 V, ID = −7 A 5.5 5.5 nC Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
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