SI4446DY datasheet(1/9 Pages) VISHAY

No. de pieza	SI4446DY

Descripción Electrónicos	N-Channel 40-V (D-S) MOSFET

Download	9 Pages

Scroll/Zoom	100%

Fabricante Electrónico	VISHAY [Vishay Siliconix]

Página de inicio	http://www.vishay.com

Logo

1 / 9 page

Vishay Siliconix

Si4446DY

New Product

Document Number: 73661

S09-0322-Rev. B, 02-Mar-09

www.vishay.com

1

N-Channel 40-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

TrenchFET® Power MOSFET

•100 % Rg

•100 % Rg UIS Tested

APPLICATIONS

•

CCFL Inverter

Notes:

a. Surface mounted on 1" x 1" FR4 board.

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

ID (A)

d

Qg (Typ.)

40

0.040 at VGS = 10 V

5.2

8

0.045 at VGS = 4.5 V

4.9

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

Unit

Drain-Source Voltage

VDS

40

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a

TA = 25 °C

ID

5.2

3.9

A

TA = 70 °C

4.2

3.1

Pulsed Drain Current

IDM

30

Continuous Source Current (Diode Conduction)a

IS

1.7

0.9

Avalanche Current

L = 0.1 mH

IAS

13

Single-Pulse Avalanche Energy

EAS

8.5

mJ

Maximum Power Dissipationa

TA = 25 °C

PD

2.0

1.1

W

TA = 70 °C

1.3

0.7

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

D

G

S

N-Channel MOSFET

S

D

S

G

D

SO-8

5

6

7

8

Top View

2

3

4

1

Ordering Information: Si4446DY-T1-E3 (Lead (Pb)-free)

Si4446DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

≤ 10 s

RthJA

52

62.5

°C/W

Steady State

90

110

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

32

40

Número de pieza similar - SI4446DY

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
VBsemi Electronics Co.,...	SI4446DY-T1-E3	1Mb / 9P	N-Channel 40-V (D-S) MOSFET

More results

Descripción similar - SI4446DY

Fabricante Electrónico	No. de pieza	Datasheet	Descripción Electrónicos
Vishay Siliconix	SI2318DS	79Kb / 4P	N-Channel 40-V (D-S) MOSFET Rev. A, 18-Aug-03
	SIRA58DP	409Kb / 13P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
	SUM90N04-3M3P	185Kb / 8P	N-Channel 40 V (D-S) MOSFET Rev. B, 02-Dec-13
Analog Power	AM2340N	326Kb / 5P	N-Channel 40-V (D-S) MOSFET
Analog Power	AM90N04-01P	315Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI7156DP	108Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. B, 09-Feb-09
Vishay Siliconix	SISS10DN	330Kb / 9P	N-Channel 40 V (D-S) MOSFET Rev. A, 08-Feb-16
Analog Power	AM2344N	313Kb / 5P	N-Channel 40-V (D-S) MOSFET
Vishay Siliconix	SI2318CDS	236Kb / 10P	N-Channel 40 V (D-S) MOSFET Rev. A, 04-Oct-10
Vishay Siliconix	SI4154DY	91Kb / 7P	N-Channel 40-V (D-S) MOSFET Rev. A, 01-Jun-09

More results

SI4446DY Datasheet(PDF) 1 Page - Vishay Siliconix

SI4446DY Datasheet(HTML) 1 Page - Vishay Siliconix

Número de pieza similar - SI4446DY

Descripción similar - SI4446DY

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Descarga

Enlace URL