SI4472DY datasheet(2/4 Pages) VISHAY

No. de pieza	SI4472DY

Descripción Electrónicos	N-Channel 150-V (D-S) MOSFET

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Fabricante Electrónico	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SPICE Device Model Si4472DY

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

3

V

On-State Drain Current

a

ID(on)

VDS = 10 V, VGS = 10 V

136

A

VGS = 10 V, ID = 5 A

0.036

Drain-Source On-State Resistance

a

rDS(on)

VGS = 8 V, ID = 5 A

0.037

0.0375

Ω

Forward Transconductance

a

gfs

VDS = 15 V, ID = 5 A

19

23

S

Forward Voltage

a

VSD

IS = 2.6 A

0.73

0.77

V

Dynamic

b

Input Capacitance

Ciss

1725

1735

Output Capacitance

Coss

165

160

Reverse Transfer Capacitance

Crss

VDS = 50 V, VGS = 0 V, f = 1 MHz

34

37

pF

VDS = 75 V, VGS = 10 V, ID = 5 A

28

28.5

Total Gate Charge

Qg

24

23

Gate-Source Charge

Qgs

8

Gate-Drain Charge

Qgd

VDS = 75 V, VGS = 8 V, ID = 5 A

6.5

nC

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

2

www.vishay.com

Document Number: 74208

S-71189

Rev. A, 18-Ju-07

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